Parametric results for: BUZ102S-4 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

2 hits Apply

245.0 mJ 2

2 hits Apply

Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

55 V 2

2 hits Apply

Drain Current-Max (ID) (1)

6.4 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

28 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-G28 2

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 Siemens 1

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

28 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

9.6 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply