Parametric results for: BUZ10 under Power Field-Effect Transistors

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Manufacturer Part Number: buz10
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BUZ103SE3045
Infineon Technologies AG
Check for Price Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 31 A 36 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 75 W 124 A SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE INFINEON TECHNOLOGIES AG D2PAK SMALL OUTLINE, R-PSSO-G2 4 compliant EAR99
BUZ100L
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 60 A 18 mΩ LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 W 240 A SWITCHING SILICON TO-220AB R-PSFM-T3 e0 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN LEAD THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG FLANGE MOUNT, R-PSFM-T3 not_compliant EAR99
BUZ10S2-E3046
Infineon Technologies AG
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 23 A 70 mΩ 8 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 92 A SWITCHING SILICON R-PSIP-T3 Not Qualified PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG TO-220AB IN-LINE, R-PSIP-T3 3 unknown EAR99
BUZ102SE3045A
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 52 A 18 mΩ AVALANCHE RATED 245 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 W 208 A SILICON TO-263AB R-PSSO-G2 e0 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING SINGLE INFINEON TECHNOLOGIES AG D2PAK PLASTIC, TO-263, 3 PIN 4 not_compliant EAR99
BUZ103
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 40 A 40 mΩ AVALANCHE RATED 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 W 160 A SILICON TO-220AB R-PSFM-T3 e0 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN LEAD THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG FLANGE MOUNT, R-PSFM-T3 not_compliant EAR99
BUZ10L-E3044
Siemens
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 23 A 70 mΩ LOGIC LEVEL COMPATIBLE 8 mJ 170 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 75 W 92 A SWITCHING SILICON 255 ns 160 ns R-PSSO-G3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE SIEMENS A G TO-220AB SMALL OUTLINE, R-PSSO-G3 3 unknown EAR99 8541.29.00.95
BUZ101L
Siemens
Check for Price Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 29 A 60 mΩ AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 70 mJ 150 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 100 W 116 A SILICON 305 ns 180 ns TO-220AB R-PSFM-T3 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE SIEMENS A G SFM FLANGE MOUNT, R-PSFM-T3 3 unknown EAR99 8541.29.00.95
BUZ104SL-4
Siemens
Check for Price Transferred N-CHANNEL YES SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 28 55 V 4 3.2 A 125 mΩ LOGIC LEVEL COMPATIBLE 52 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 12.8 A SWITCHING SILICON R-PDSO-G28 Not Qualified PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL SIEMENS A G SOT SMALL OUTLINE, R-PDSO-G28 28 unknown EAR99
BUZ101SE3045A
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 22 A 50 mΩ AVALANCHE RATED 90 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 55 W 88 A SILICON TO-263AB R-PSSO-G2 e0 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING SINGLE INFINEON TECHNOLOGIES AG D2PAK PLASTIC, TO-263, 3 PIN 4 not_compliant EAR99
BUZ102
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 42 A 23 mΩ AVALANCHE RATED 180 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 168 A SILICON TO-220AB R-PSFM-T3 e0 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN LEAD THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG unknown EAR99