Parametric results for: BUK9Y40-55B under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

6 hits Apply

36.0 mJ 4

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

55 V 4

6 hits Apply

Drain Current-Max (ID) (3)

18 A 1 20 A 1 26 A 4

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

40 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

MO-235 2

6 hits Apply

R-PSSO-G4 4

6 hits Apply

e0 1 e3 4

6 hits Apply

Manufacturer (3)

Nexperia 2 NXP Semiconductors 3 Philips Semiconductors 1

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Active 2 Obsolete 1 Transferred 3

6 hits Apply

Yes 1

6 hits Apply

260 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

50 W 2 59 W 2

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply