Parametric results for: BUK9Y25-60E under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

4 hits Apply

23.6 mJ 1

4 hits Apply

DRAIN 1

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

4 hits Apply

Drain Current-Max (ID) (1)

34 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

MO-235 1

4 hits Apply

R-PSSO-G4 1

4 hits Apply

e3 3

4 hits Apply

Manufacturer (2)

Nexperia 2 NXP Semiconductors 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

4 1

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

175.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 2 Transferred 2

4 hits Apply

260 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

65 W 1

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply