Parametric results for: BUK6E2R0-30C127 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

1700.0 mJ 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

2 hits Apply

Drain Current-Max (ID) (1)

120 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

3.7 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-262AA 1

2 hits Apply

R-PSIP-T3 1

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Nexperia 1 NXP Semiconductors 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

IN-LINE 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

306 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply