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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: BUK664R8-75C under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		BUK664R8-75C Nexperia
		BUK664R8-75C,118 Nexperia
		BUK664R8-75C,118 NXP Semiconductors
		BUK664R8-75C NXP Semiconductors

			Most Relevant								Technical							Compliance			Operating Conditions				Physical							Other
Composite Price	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	Date Of Intro	Samacsys Manufacturer	Part Package Code	Pin Count	Manufacturer Package Code

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

75 V

1

100 A

4.8 mΩ

398 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

646 A

SWITCHING

SILICON

R-PSSO-G2

e3

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

D2PAK-3

not_compliant

EAR99

2017-02-01

Nexperia

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

75 V

1

100 A

4.8 mΩ

398 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

646 A

SWITCHING

SILICON

R-PSSO-G2

e3

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

D2PAK-3

not_compliant

EAR99

Nexperia

D2PAK

3

SOT404

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

262 W

e3

1

175 °C

245

30

TIN

NXP SEMICONDUCTORS

not_compliant

EAR99

D2PAK

3

SOT404

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

75 V

1

100 A

4.8 mΩ

398 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

646 A

SWITCHING

SILICON

R-PSSO-G2

e3

Not Qualified

1

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NXP SEMICONDUCTORS

SMALL OUTLINE, R-PSSO-G2

unknown

EAR99

3

Compare

Nexperia

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

75 V

1

100 A

4.8 mΩ

398 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

646 A

SWITCHING

SILICON

R-PSSO-G2

e3

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

D2PAK-3

not_compliant

EAR99

2017-02-01

Nexperia

BUK664R8-75C,118

Nexperia

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

75 V

1

100 A

4.8 mΩ

398 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

646 A

SWITCHING

SILICON

R-PSSO-G2

e3

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

D2PAK-3

not_compliant

EAR99

Nexperia

D2PAK

3

SOT404

BUK664R8-75C,118

NXP Semiconductors

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

262 W

e3

1

175 °C

245

30

TIN

NXP SEMICONDUCTORS

not_compliant

EAR99

D2PAK

3

SOT404

NXP Semiconductors

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

75 V

1

100 A

4.8 mΩ

398 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

646 A

SWITCHING

SILICON

R-PSSO-G2

e3

Not Qualified

1

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NXP SEMICONDUCTORS

SMALL OUTLINE, R-PSSO-G2

unknown

EAR99

3