Parametric results for: BUK456-200B under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

5 hits Apply

Drain Current-Max (ID) (1)

17 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

100 pF 1

5 hits Apply

TO-220AB 3

5 hits Apply

R-PSFM-T3 3

5 hits Apply

e0 2

5 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2 175.0 °C 3

Min (°C) - Max (°C)

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

FLANGE MOUNT 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

150 W 1

5 hits Apply

150 W 2

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply