Parametric results for: BUK436-100B under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

3 hits Apply

Drain Current-Max (ID) (1)

31 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

65 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSFM-T3 1

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

125 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply