Parametric results for: BUJ105AB,118 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

COLLECTOR 2

2 hits Apply

Collector Current-Max (IC) (1)

8 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

400 V 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

13.0 2

2 hits Apply

R-PSSO-G2 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

NXP Semiconductors 1 WeEn Semiconductor Co Ltd 1

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

125 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply