Parametric results for: BUJ100LR,412 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

1 A 1

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Collector-Emitter Voltage-Max (1)

400 V 1

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Configuration (1)

SINGLE 1

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DC Current Gain-Min (hFE) (1)

5.0 1

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TO-92 1

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O-PBCY-T3 1

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Manufacturer (1)

WeEn Semiconductor Co Ltd 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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ROUND 1

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CYLINDRICAL 1

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Active 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

NPN 1

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2.1 W 1

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Surface Mount (1)

NO 1

1 hit Apply