Parametric results for: BSZ084N08NS5 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

76.0 mJ 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

80 V 2

2 hits Apply

Drain Current-Max (ID) (2)

40 A 1 64 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (1)

8.4 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

22.8 pF 1

2 hits Apply

S-PDSO-N8 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (1)

Infineon Technologies AG 2

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

8 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SQUARE 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 2

2 hits Apply

Yes 1

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

63 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply