Parametric results for: BSS129 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 9

13 hits Apply

DS Breakdown Voltage-Min (2)

230 V 3 240 V 10

Min (V) - Max (V)

13 hits Apply

Drain Current-Max (ID) (1)

150 mA 13

13 hits Apply

Drain-source On Resistance-Max (1)

20 Ω 12

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

10 pF 6

13 hits Apply

TO-18 1 TO-226AA 1 TO-92 11

13 hits Apply

O-PBCY-T3 10 O-PBCY-W3 2 O-XBCY-W3 1

13 hits Apply

e0 3

13 hits Apply

Manufacturer (5)

Infineon Technologies AG 4 Siemens 6 Temic Semiconductors 1 Vishay Intertechnologies 1 Vishay Siliconix 1

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

3 13

13 hits Apply

DEPLETION MODE 13

13 hits Apply

150.0 °C 3

13 hits Apply

PLASTIC/EPOXY 12 UNSPECIFIED 1

13 hits Apply

ROUND 13

13 hits Apply

CYLINDRICAL 13

13 hits Apply

Active 1 Obsolete 6 Transferred 6

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

1 W 2

13 hits Apply

Surface Mount (1)

NO 13

13 hits Apply