Parametric results for: BSS100 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 13

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Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 43

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DS Breakdown Voltage-Min (1)

100 V 43

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Drain Current-Max (ID) (3)

170 mA 7 220 mA 37 250 mA 3

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

6 Ω 9 10 Ω 34

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 47

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6 pF 36 10 pF 1

Min (pF) - Max (pF)

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TO-92 35

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O-PBCY-T3 43

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e0 9

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Manufacturer (11)

Calogic Inc 6 Fairchild Semiconductor Corporation 23 Infineon Technologies AG 4 National Semiconductor Corporation 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1 Siemens 5 Sipex Corporation 1 Texas Instruments 4

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Number of Elements (1)

1 47

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Number of Terminals (1)

3 43

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ENHANCEMENT MODE 47

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150.0 °C 16

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-55.0 °C 1

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PLASTIC/EPOXY 43

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ROUND 43

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CYLINDRICAL 43

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Active 1 Obsolete 35 Transferred 12

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Polarity/Channel Type (1)

N-CHANNEL 47

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360 mW 2 830 mW 7

Min (W) - Max (W)

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Surface Mount (1)

NO 47

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