Parametric results for: BSP225-T under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

12 hits Apply

DRAIN 7

12 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 11

12 hits Apply

DS Breakdown Voltage-Min (1)

250 V 8

12 hits Apply

Drain Current-Max (ID) (2)

225 mA 8 250 mA 2

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (1)

15 Ω 10

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

12 hits Apply

15 pF 6

12 hits Apply

R-PDSO-G4 11

12 hits Apply

e3 4

12 hits Apply

Manufacturer (4)

Nexperia 2 NXP Semiconductors 7 Philips Semiconductors 1 YAGEO Corporation 2

12 hits Apply

1 3

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

4 11

12 hits Apply

ENHANCEMENT MODE 9

12 hits Apply

150.0 °C 7

12 hits Apply

PLASTIC/EPOXY 11

12 hits Apply

RECTANGULAR 11

12 hits Apply

SMALL OUTLINE 11

12 hits Apply

Active 2 Obsolete 7 Transferred 3

12 hits Apply

Yes 2

12 hits Apply

NOT SPECIFIED 2

12 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 10

12 hits Apply

1.5 W 2

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply