Parametric results for: BSP205 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2

14 hits Apply

DRAIN 9

14 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 11

14 hits Apply

DS Breakdown Voltage-Min (2)

50 V 5 60 V 5

Min (V) - Max (V)

14 hits Apply

Drain Current-Max (ID) (2)

250 mA 5 275 mA 8

Min (A) - Max (A)

14 hits Apply

Drain-source On Resistance-Max (1)

10 Ω 11

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

14 hits Apply

10 pF 5

14 hits Apply

R-PDSO-G4 11

14 hits Apply

e0 3

14 hits Apply

Manufacturer (4)

North American Philips Discrete Products Div 1 NXP Semiconductors 8 Philips Semiconductors 2 YAGEO Corporation 3

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

4 11

14 hits Apply

ENHANCEMENT MODE 13

14 hits Apply

150.0 °C 8

14 hits Apply

PLASTIC/EPOXY 11

14 hits Apply

RECTANGULAR 11

14 hits Apply

SMALL OUTLINE 11

14 hits Apply

Obsolete 11 Transferred 3

14 hits Apply

NOT SPECIFIED 1

14 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 13

14 hits Apply

1.5 W 4

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply