Parametric results for: BSP125H6327XTSA1 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

600 V 1

2 hits Apply

Drain Current-Max (ID) (1)

120 mA 1

2 hits Apply

Drain-source On Resistance-Max (1)

45 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

R-PDSO-G4 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (1)

Infineon Technologies AG 2

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

4 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 2

2 hits Apply

Yes 1

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply