Parametric results for: BSP125 H6327 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

3 hits Apply

Drain Current-Max (ID) (1)

120 mA 2

3 hits Apply

Drain-source On Resistance-Max (1)

45 Ω 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PDSO-G4 2

3 hits Apply

e3 2

3 hits Apply

Manufacturer (1)

Infineon Technologies AG 3

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

4 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 1

3 hits Apply

-55.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 3

3 hits Apply

Yes 2

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply