Parametric results for: BSP110TR under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

80 V 5

6 hits Apply

Drain Current-Max (ID) (1)

325 mA 5

6 hits Apply

Drain-source On Resistance-Max (1)

7 Ω 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

6 pF 1

6 hits Apply

R-PDSO-G4 5

6 hits Apply

e3 3

6 hits Apply

Manufacturer (3)

Nexperia 1 NXP Semiconductors 3 YAGEO Corporation 2

6 hits Apply

1 3

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

4 5

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 1

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Active 1 Obsolete 4 Transferred 1

6 hits Apply

Yes 1

6 hits Apply

260 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

1.5 W 1

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply