Parametric results for: BSP110T under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

80 V 1

2 hits Apply

Drain Current-Max (ID) (1)

325 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

7 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-G4 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

NXP Semiconductors 1 Philips Semiconductors 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Transferred 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

1.5 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply