Parametric results for: BSO612CV+G under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 2

3 hits Apply

47.0 mJ 2

3 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

3 hits Apply

Drain Current-Max (ID) (1)

3 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

120 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PDSO-G8 2

3 hits Apply

e4 1

3 hits Apply

Manufacturer (1)

Infineon Technologies AG 3

3 hits Apply

3 3

3 hits Apply

Number of Elements (1)

2 2

3 hits Apply

Number of Terminals (1)

8 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Obsolete 3

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply