Parametric results for: BSM111AR under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

5 hits Apply

ISOLATED 4

5 hits Apply

Configuration (3)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2 SINGLE WITH BUILT-IN RESISTOR 1

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

5 hits Apply

Drain Current-Max (ID) (1)

200 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

8.5 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

2.7 nF 2

5 hits Apply

R-PUFM-X4 3 R-XUFM-X4 1

5 hits Apply

Manufacturer (3)

Eupec Gmbh & Co Kg 1 Infineon Technologies AG 2 Siemens 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 3 UNSPECIFIED 1

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

700 W 2

5 hits Apply

700 W 3

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply