Parametric results for: BSH101 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

7 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 5

7 hits Apply

DS Breakdown Voltage-Min (1)

60 V 5

7 hits Apply

Drain Current-Max (ID) (1)

700 mA 7

7 hits Apply

Drain-source On Resistance-Max (1)

810 mΩ 5

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

R-PDSO-G3 5

7 hits Apply

e0 2

7 hits Apply

Manufacturer (2)

NXP Semiconductors 5 Philips Semiconductors 2

7 hits Apply

Number of Elements (1)

1 7

7 hits Apply

Number of Terminals (1)

3 5

7 hits Apply

ENHANCEMENT MODE 7

7 hits Apply

150.0 °C 3

7 hits Apply

PLASTIC/EPOXY 5

7 hits Apply

RECTANGULAR 5

7 hits Apply

SMALL OUTLINE 5

7 hits Apply

Obsolete 5 Transferred 2

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

7 hits Apply

500 mW 1 750 mW 2

Min (W) - Max (W)

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply