Parametric results for: BSD212 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology JESD-609 Code Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

Drain Current-Max (ID) (1)

50 mA 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (2)

North American Philips Discrete Products Div 1 Philips Semiconductors 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

125.0 °C 2

2 hits Apply

Transferred 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

275 mW 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply