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BSC022N03SGXT
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 28 A | 3.3 mΩ | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 A | SWITCHING | SILICON | R-PDSO-F8 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TDSON-8 | compliant | EAR99 | ||||||||||
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BSC022N03SGAUMA1
Infineon Technologies AG
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 30 V | 1 | 28 A | 3.3 mΩ | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 A | SWITCHING | SILICON | R-PDSO-F5 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-F5 | unknown | EAR99 | |||||||||||
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BSC022N03SG
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 28 A | 3.3 mΩ | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 104 W | 200 A | SWITCHING | SILICON | R-PDSO-F8 | e3 | Not Qualified | 3 | 150 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-F5 | compliant | EAR99 | 8 |