Parametric results for: BS107A under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

EUROPEAN PART NUMBER 10 LOGIC LEVEL COMPATIBLE 2

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Configuration (3)

SINGLE 6 Single 2 SINGLE WITH BUILT-IN DIODE 43

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DS Breakdown Voltage-Min (1)

200 V 45

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Drain Current-Max (Abs) (ID) (1)

250 mA 2

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Drain Current-Max (ID) (4)

120 mA 2 130 mA 1 150 mA 1 250 mA 45

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

6.4 Ω 42 28 Ω 3

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 51

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3.5 pF 2 10 pF 1

Min (pF) - Max (pF)

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TO-226AA 11 TO-92 30

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O-PBCY-T3 45

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e0 20 e1 3

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Manufacturer (9)

Diodes Incorporated 2 Freescale Semiconductor 2 Motorola Mobility LLC 12 Motorola Semiconductor Products 12 North American Philips Discrete Products Div 1 NXP Semiconductors 4 onsemi 10 Philips Semiconductors 3 Rochester Electronics LLC 5

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NOT SPECIFIED 1

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Number of Elements (1)

1 49

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Number of Terminals (1)

3 45

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ENHANCEMENT MODE 51

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150.0 °C 45

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PLASTIC/EPOXY 45

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ROUND 45

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CYLINDRICAL 45

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Active 5 Obsolete 27 Transferred 19

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No 5 Yes 3

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235 4 240 2 260 3 NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 51

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600 mW 2 830 mW 1

Min (W) - Max (W)

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350 mW 4 600 mW 13 1 W 2

Min (W) - Max (W)

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Surface Mount (1)

NO 51

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