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BR25S128GUZ-WE2
ROHM Semiconductor
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$1.9218 | Yes | Yes | Active | 131.072 kbit | 8 | 16KX8 | 2.5 V | 10 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | SPI | 2 µA | 8 µA | 5.5 V | 1.7 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PBGA-B12 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 12 | PLASTIC/EPOXY | VFBGA | BGA12,3X4,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 500 µm | BOTTOM | 400 µm | 2.63 mm | 2 mm | ROHM CO LTD | BGA | ROHS COMPLIANT, WLCSP-12 | 12 | compliant | EAR99 | 8542.32.00.51 | ||||
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BR25S128GUZ-W
ROHM Semiconductor
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Check for Price | Yes | Yes | Active | 131.072 kbit | 8 | 16KX8 | 2.5 V | 10 MHz | EEPROM | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | SPI | 5.5 V | 1.7 V | CMOS | INDUSTRIAL | 5 ms | R-PBGA-B12 | Not Qualified | e1 | 85 °C | -40 °C | 260 | NOT SPECIFIED | 12 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 500 µm | BOTTOM | 400 µm | 2.63 mm | 2 mm | ROHM CO LTD | BGA | VFBGA, | 12 | compliant | EAR99 | 8542.32.00.51 |