Parametric results for: BLX65E under Other Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

EMITTER 2

8 hits Apply

Collector Current-Max (IC) (2)

700 mA 6 2.5 A 2

Min (A) - Max (A)

8 hits Apply

Collector-Emitter Voltage-Max (2)

16 V 2 30 V 2

Min (V) - Max (V)

8 hits Apply

Configuration (1)

SINGLE 8

8 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 6

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

8 hits Apply

TO-39 2

8 hits Apply

O-MBCY-W3 2

8 hits Apply

e0 4

8 hits Apply

Manufacturer (4)

New Jersey Semiconductor Products Inc 2 North American Philips Discrete Products Div 2 NXP Semiconductors 2 Philips Semiconductors 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

3 2

8 hits Apply

200.0 °C 4

8 hits Apply

METAL 2

8 hits Apply

ROUND 2

8 hits Apply

CYLINDRICAL 2

8 hits Apply

Active 2 Obsolete 2 Transferred 4

8 hits Apply

Polarity/Channel Type (1)

NPN 8

8 hits Apply

3 W 4

8 hits Apply

Power Gain-Min (Gp) (1)

9.0 dB 2

8 hits Apply

Surface Mount (1)

NO 6

8 hits Apply

Transition Frequency-Nom (fT) (1)

1.4 GHz 2

8 hits Apply