Parametric results for: BLX13C under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (2)

2 A 1 3 A 4

Min (A) - Max (A)

5 hits Apply

Collector-Emitter Voltage-Max (2)

36 V 2 120 V 1

Min (V) - Max (V)

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 5

5 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 3

5 hits Apply

O-CRDB-F4 1 O-CRPM-F4 1

5 hits Apply

Manufacturer (5)

Advanced Semiconductor Inc 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 2

5 hits Apply

200.0 °C 4

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

5 hits Apply

ROUND 2

5 hits Apply

DISK BUTTON 1 POST/STUD MOUNT 1

5 hits Apply

Active 2 Obsolete 1 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

73 W 3

5 hits Apply

Surface Mount (2)

NO 1 YES 3

5 hits Apply

Transition Frequency-Nom (fT) (2)

10 MHz 1 530 MHz 1

Min (MHz) - Max (MHz)

5 hits Apply