Parametric results for: BLT52 under RF Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS 3

5 hits Apply

Collector Current-Max (IC) (1)

2.5 A 5

5 hits Apply

Collector-Emitter Voltage-Max (1)

10 V 3

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DC Current Gain-Min (hFE) (1)

25.0 5

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

5 hits Apply

R-CDSO-G8 3

5 hits Apply

e0 2

5 hits Apply

Manufacturer (2)

NXP Semiconductors 3 Philips Semiconductors 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

8 3

5 hits Apply

200.0 °C 5

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

23 W 3

5 hits Apply

13 W 2

5 hits Apply

Power Gain-Min (Gp) (1)

8.0 dB 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply