Parametric results for: BLL6H1214-500,112 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

1 hit Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 1

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DS Breakdown Voltage-Min (1)

100 V 1

1 hit Apply

Drain Current-Max (ID) (1)

45 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

L BAND 1

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R-CDFM-F4 1

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Manufacturer (1)

Ampleon 1

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1 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Contact Manufacturer 1

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245 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply