Parametric results for: BLF888D under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

5 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 1

5 hits Apply

DS Breakdown Voltage-Min (1)

104 V 1

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

5 hits Apply

R-CDFM-F4 1

5 hits Apply

Manufacturer (2)

Ampleon 3 NXP Semiconductors 2

5 hits Apply

Number of Elements (1)

2 1

5 hits Apply

Number of Terminals (1)

4 1

5 hits Apply

ENHANCEMENT MODE 1

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

5 hits Apply

RECTANGULAR 1

5 hits Apply

FLANGE MOUNT 1

5 hits Apply

Contact Manufacturer 3 Transferred 2

5 hits Apply

NOT SPECIFIED 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

5 hits Apply

Surface Mount (1)

YES 1

5 hits Apply