Parametric results for: BLF6G38-100,112 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Configuration (1)

SINGLE 1

1 hit Apply

Drain Current-Max (ID) (1)

34 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

Manufacturer (1)

NXP Semiconductors 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

200.0 °C 1

1 hit Apply

Transferred 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply