Parametric results for: BLF6G27LS-40P under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 4

6 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 4

6 hits Apply

DS Breakdown Voltage-Min (1)

65 V 4

6 hits Apply

Drain Current-Max (ID) (1)

15.5 A 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

Highest Frequency Band (1)

S BAND 4

6 hits Apply

R-CDFP-F4 4

6 hits Apply

Manufacturer (2)

Ampleon 4 NXP Semiconductors 2

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Number of Elements (1)

2 4

6 hits Apply

Number of Terminals (1)

4 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLATPACK 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

NOT SPECIFIED 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

Surface Mount (1)

YES 4

6 hits Apply