Parametric results for: BLF6G10-160RN,112 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Configuration (1)

SINGLE 1

1 hit Apply

Drain Current-Max (ID) (1)

39 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

1 1

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ENHANCEMENT MODE 1

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225.0 °C 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply