Parametric results for: BLF647P under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ESD PROTECTED, HIGH RELIABILITY 4

8 hits Apply

SOURCE 6

8 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 6

8 hits Apply

DS Breakdown Voltage-Min (1)

65 V 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

Highest Frequency Band (1)

L BAND 6

8 hits Apply

R-CDFM-F4 3 R-CDFP-F4 3

8 hits Apply

Manufacturer (2)

Ampleon 4 NXP Semiconductors 4

8 hits Apply

1 1

8 hits Apply

Number of Elements (1)

2 6

8 hits Apply

Number of Terminals (1)

4 6

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

200.0 °C 2

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

FLANGE MOUNT 3 FLATPACK 3

8 hits Apply

Contact Manufacturer 4 Transferred 4

8 hits Apply

Yes 2

8 hits Apply

245 1 260 2 NOT SPECIFIED 5

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

Surface Mount (1)

YES 6

8 hits Apply