Parametric results for: BLF647,112 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 1

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Configuration (1)

COMMON SOURCE, 2 ELEMENTS 1

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DS Breakdown Voltage-Min (1)

65 V 1

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Drain Current-Max (ID) (1)

18 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

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R-CDFM-F4 1

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Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

4 1

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ENHANCEMENT MODE 1

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200.0 °C 1

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CERAMIC, METAL-SEALED COFIRED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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290 W 1

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Surface Mount (1)

YES 1

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