Parametric results for: BLF578XR under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 4

8 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 4

8 hits Apply

DS Breakdown Voltage-Min (1)

110 V 4

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

8 hits Apply

R-CDFM-F4 3 R-CDFP-F4 1

8 hits Apply

Manufacturer (2)

Ampleon 4 NXP Semiconductors 4

8 hits Apply

1 1 NOT APPLICABLE 1

8 hits Apply

Number of Elements (1)

2 4

8 hits Apply

Number of Terminals (1)

4 4

8 hits Apply

ENHANCEMENT MODE 6

8 hits Apply

200.0 °C 1 225.0 °C 1

Min (°C) - Max (°C)

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

8 hits Apply

RECTANGULAR 4

8 hits Apply

FLANGE MOUNT 3 FLATPACK 1

8 hits Apply

Contact Manufacturer 2 Obsolete 2 Transferred 4

8 hits Apply

245 1 NOT SPECIFIED 5

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

8 hits Apply

Surface Mount (1)

YES 4

8 hits Apply