Parametric results for: BLF578 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 7

12 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 7

12 hits Apply

DS Breakdown Voltage-Min (1)

110 V 7

12 hits Apply

Drain Current-Max (ID) (2)

88 A 2 112 A 1

Min (A) - Max (A)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

12 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 7

12 hits Apply

R-CDFM-F4 6 R-CDFP-F4 1

12 hits Apply

Manufacturer (2)

Ampleon 6 NXP Semiconductors 6

12 hits Apply

1 2 NOT APPLICABLE 1

12 hits Apply

Number of Elements (1)

2 7

12 hits Apply

Number of Terminals (1)

4 7

12 hits Apply

ENHANCEMENT MODE 10

12 hits Apply

200.0 °C 1 225.0 °C 3

Min (°C) - Max (°C)

12 hits Apply

CERAMIC, METAL-SEALED COFIRED 7

12 hits Apply

RECTANGULAR 7

12 hits Apply

FLANGE MOUNT 6 FLATPACK 1

12 hits Apply

Contact Manufacturer 4 Obsolete 2 Transferred 6

12 hits Apply

245 2 NOT SPECIFIED 7

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

12 hits Apply

Surface Mount (1)

YES 7

12 hits Apply