Parametric results for: BLF3G21-6,135 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

Drain Current-Max (ID) (1)

2.3 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

1 1

1 hit Apply

ENHANCEMENT MODE 1

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200.0 °C 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply