Parametric results for: BLF2425M6L180P under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 2

6 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 2

6 hits Apply

DS Breakdown Voltage-Min (1)

65 V 2

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

Highest Frequency Band (1)

S BAND 2

6 hits Apply

R-CDFM-F4 2

6 hits Apply

Manufacturer (2)

Ampleon 3 NXP Semiconductors 3

6 hits Apply

Number of Elements (1)

2 2

6 hits Apply

Number of Terminals (1)

4 2

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 2

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

6 hits Apply

RECTANGULAR 2

6 hits Apply

FLANGE MOUNT 2

6 hits Apply

Obsolete 3 Transferred 3

6 hits Apply

NOT SPECIFIED 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

Surface Mount (1)

YES 2

6 hits Apply