Parametric results for: BGD802MI under RF/Microwave Amplifiers

All Filters Additional Feature Characteristic Impedance Construction Gain Input Power-Max (CW) Manufacturer Operating Frequency-Max Operating Frequency-Min Operating Temperature-Max Operating Temperature-Min RF/Microwave Device Type

LOW NOISE, HIGH RELIABILITY 1

2 hits Apply

Characteristic Impedance (1)

75 Ω 1

2 hits Apply

MODULE 1

2 hits Apply

Gain (1)

18.5 dB 1

2 hits Apply

Input Power-Max (CW) (1)

16.25 dBm 1

2 hits Apply

Manufacturer (2)

NXP Semiconductors 1 Philips Semiconductors 1

2 hits Apply

Operating Frequency-Max (1)

860 MHz 1

2 hits Apply

40 MHz 1

2 hits Apply

100.0 °C 2

2 hits Apply

-20.0 °C 2

2 hits Apply

RF/Microwave Device Type (1)

WIDE BAND HIGH POWER 1

2 hits Apply