Parametric results for: BFR29 under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SUBSTRATE 1

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

3 hits Apply

Drain Current-Max (ID) (1)

20 mA 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

0.7 pF 1

3 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

3 hits Apply

TO-72 1

3 hits Apply

O-MBCY-W3 1

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

DEPLETION MODE 3

3 hits Apply

125.0 °C 3

3 hits Apply

METAL 1

3 hits Apply

ROUND 1

3 hits Apply

CYLINDRICAL 1

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

200 mW 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply