Parametric results for: BFQ135 under Other Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

WITH EMITTER BALLASTING RESISTOR 1 WITH EMITTER BALLASTING RESISTORS 1

4 hits Apply

EMITTER 1 ISOLATED 1

4 hits Apply

Collector Current-Max (IC) (1)

150 mA 4

4 hits Apply

1.2 pF 2

4 hits Apply

Collector-Emitter Voltage-Max (1)

19 V 2

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (1)

55.0 3

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

4 hits Apply

O-CRDB-F4 2

4 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 2 Philips Semiconductors 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 2

4 hits Apply

200.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

4 hits Apply

ROUND 2

4 hits Apply

DISK BUTTON 2

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

2.7 W 3

4 hits Apply

Surface Mount (2)

NO 2 YES 2

4 hits Apply

Transition Frequency-Nom (fT) (1)

6.5 GHz 4

4 hits Apply