Parametric results for: BFG55 under Other Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY 1

8 hits Apply

COLLECTOR 4

8 hits Apply

Collector Current-Max (IC) (1)

150 mA 8

8 hits Apply

Collector-Emitter Voltage-Max (1)

18 V 6

8 hits Apply

Configuration (1)

SINGLE 8

8 hits Apply

DC Current Gain-Min (hFE) (1)

25.0 3

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

8 hits Apply

R-PDSO-G4 6

8 hits Apply

e0 2

8 hits Apply

Manufacturer (4)

North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 1 YAGEO Corporation 3

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

4 6

8 hits Apply

175.0 °C 3

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

SMALL OUTLINE 6

8 hits Apply

Obsolete 6 Transferred 2

8 hits Apply

Polarity/Channel Type (1)

PNP 8

8 hits Apply

1 W 1

8 hits Apply

1 W 2

8 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 2

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply

Transition Frequency-Nom (fT) (1)

4 GHz 8

8 hits Apply