Parametric results for: BF994S under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 1

8 hits Apply

Configuration (2)

SINGLE 7 SINGLE WITH BUILT-IN DIODE 1

8 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

8 hits Apply

Drain Current-Max (ID) (1)

30 mA 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

8 hits Apply

R-PDSO-G4 1

8 hits Apply

e0 4 e3 1

8 hits Apply

Manufacturer (5)

Infineon Technologies AG 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 2 Telefunken Microelectronics Gmbh 3

8 hits Apply

1 1

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

4 1

8 hits Apply

DUAL GATE, DEPLETION MODE 8

8 hits Apply

150.0 °C 8

8 hits Apply

PLASTIC/EPOXY 1

8 hits Apply

RECTANGULAR 1

8 hits Apply

SMALL OUTLINE 1

8 hits Apply

Obsolete 2 Transferred 6

8 hits Apply

260 3

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

200 mW 8

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply