Parametric results for: BF1212,215 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 1

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SOURCE 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

6 V 1

1 hit Apply

Drain Current-Max (ID) (1)

30 mA 1

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METAL-OXIDE SEMICONDUCTOR 1

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0.03 pF 1

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

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R-PDSO-G4 1

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e3 1

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Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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DUAL GATE, ENHANCEMENT MODE 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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180 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply