Parametric results for: BF1108RTR under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

GATE 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

3 V 1

1 hit Apply

Drain Current-Max (ID) (1)

10 mA 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

1 hit Apply

R-PDSO-G4 1

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e3 1

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Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

1 hit Apply

DEPLETION MODE 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

1 hit Apply