Parametric results for: BF1105; under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 10

15 hits Apply

Configuration (2)

SINGLE 11 SINGLE WITH BUILT-IN DIODE 4

15 hits Apply

DS Breakdown Voltage-Min (1)

7 V 10

15 hits Apply

Drain Current-Max (ID) (1)

30 mA 15

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

15 hits Apply

0.04 pF 10

15 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 10

15 hits Apply

R-PDSO-G4 10

15 hits Apply

e3 13

15 hits Apply

Manufacturer (2)

NXP Semiconductors 12 Philips Semiconductors 3

15 hits Apply

1 3

15 hits Apply

Number of Elements (1)

1 15

15 hits Apply

Number of Terminals (1)

4 10

15 hits Apply

DUAL GATE, ENHANCEMENT MODE 10

15 hits Apply

150.0 °C 10

15 hits Apply

PLASTIC/EPOXY 10

15 hits Apply

RECTANGULAR 10

15 hits Apply

SMALL OUTLINE 10

15 hits Apply

Obsolete 12 Transferred 3

15 hits Apply

Yes 7

15 hits Apply

260 3 NOT SPECIFIED 2

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 15

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply