Parametric results for: BF1101 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOW NOISE 8

14 hits Apply

SOURCE 8

14 hits Apply

Configuration (1)

SINGLE 14

14 hits Apply

DS Breakdown Voltage-Min (1)

7 V 8

14 hits Apply

Drain Current-Max (ID) (1)

30 mA 14

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

14 hits Apply

0.035 pF 8

14 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 8

14 hits Apply

R-PDSO-G4 8

14 hits Apply

e3 12

14 hits Apply

Manufacturer (2)

NXP Semiconductors 11 Philips Semiconductors 3

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

4 8

14 hits Apply

DUAL GATE, ENHANCEMENT MODE 8

14 hits Apply

150.0 °C 10

14 hits Apply

PLASTIC/EPOXY 8

14 hits Apply

RECTANGULAR 8

14 hits Apply

SMALL OUTLINE 8

14 hits Apply

Obsolete 11 Transferred 3

14 hits Apply

Yes 2

14 hits Apply

260 6

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply