Parametric results for: BF1100R-TAPE-7 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

LOW NOISE 1

1 hit Apply

SOURCE 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

14 V 1

1 hit Apply

Drain Current-Max (ID) (1)

30 mA 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

0.035 pF 1

1 hit Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

1 hit Apply

R-PDSO-G4 1

1 hit Apply

Manufacturer (1)

NXP Semiconductors 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

DUAL GATE, ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply